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APTM120DA30CT1G

Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W

Manufacturer: MICROCHIP TECHNOLOGY

Manufacturer part number:
APTM120DA30CT1G
TME Symbol:
APTM120DA30CT1G
MICROCHIP TECHNOLOGY - logo

Specification

Manufacturer
MICROCHIP TECHNOLOGY
Type of semiconductor module
MOSFET transistor
Semiconductor structure
SiC diode/transistor
Drain-source voltage
1.2kV
Drain current
23A
Case
SP1
Topology
boost chopper, NTC thermistor
Electrical mounting
Press-in PCB
On-state resistance
0.36Ω
Pulsed drain current
195A
Power dissipation
657W
Technology
POWER MOS 8®, SiC
Gate-source voltage
±30V
Mechanical mounting
screw
Gross weight80 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: Transistor modules MOSFET MICROCHIP TECHNOLOGY,
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APTM120DA30CT1G
0 in TME stock
Net price for quantities from 12 pcs - 75.25 USDGross price for quantities from 12 pcs - 75.25 USD
No. of pieces (Multiplicity: 12)