APTCV60HM45RCT3G
Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Manufacturer: MICROCHIP TECHNOLOGY
Manufacturer part number:
APTCV60HM45RCT3G
TME Symbol:
APTCV60HM45RCT3G
Specification
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of semiconductor module | MOSFET / IGBT transistor | ||
Semiconductor structure | SiC diode/transistor | ||
Drain-source voltage | 600V | ||
Drain current | 38A | ||
Case | SP3F | ||
Topology | H-bridge, NTC thermistor, single-phase diode bridge | ||
Electrical mounting | Press-in PCB | ||
On-state resistance | 45mΩ | ||
Pulsed drain current | 130A | ||
Power dissipation | 250W | ||
Technology | CoolMOS™, Field Stop, SiC, Trench | ||
Gate-source voltage | ±20V | ||
Mechanical mounting | screw | ||
Collector current | 50A |
Gross weight110 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: Transistor modules MOSFET MICROCHIP TECHNOLOGY,
* APTCV60HM45RCT3GNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 162.76 USDGross price for quantities from 1 pcs - 162.76 USD
Net price for quantities from 3 pcs - 145.70 USDGross price for quantities from 3 pcs - 145.70 USD
Net price for quantities from 10 pcs - 129.43 USDGross price for quantities from 10 pcs - 129.43 USD
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