Single-transistor output optocouplers by IXYS


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IXYS optocouplers available at TME are made of a high-performance IR transmitting diode based on GaAiAs structure paired with a phototransistor, and enclosed in a single, sealed housing. Their construction allows to provide galvanic separation at the voltage of up to 5000Vrms.

They are also characterized by a high CTR coefficient, low control current and high operating speed. Low control power enables direct cooperation with TTL/CMOS systems.

They do not generate EMI/RFI interference and are UL, CSA and TUV certified (according to the datasheet).

These components are widely applied in data transmission systems, meters, sensors, industrial controllers etc.

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Phototransistor operating voltage max 30V
Insulation voltage up to 5000Vrms
Transmitting diode current max 50mA
Turn-on/off time 2µs / 8µs
Operating temperature from – 40°C to +85°C

Symbol: Description:
CPC1303G Optocoupler; THT; Channels: 1; Output: transistor; 5kV; DIP4
CPC1303GR Optocoupler; SMD; Channels: 1; Output: transistor; 5kV; SO4
CPC1303GRTR Optocoupler; SMD; Channels: 1; Output: transistor; 5kV; SO4


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