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Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | N-MOSFET x2 | |
Polarisation | unipolar | |
Kind of transistor | RF | |
Drain-source voltage | 500V | |
Drain current | 10A | |
Power dissipation | 910W | |
Case | T3A-8 | |
Gate-source voltage | ±30V | |
Kind of package | tube | |
Frequency | 128MHz | |
Kind of channel | depletion | |
Semiconductor structure | common source | |
Features of semiconductor devices | dual gate | |
Output power | 900W | |
Electrical mounting | FASTON connectors, soldering, THT | |
Open-loop gain | 16dB | |
Efficiency | 55% | |
Mechanical mounting | screw |