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Manufacturer	BASiC SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.7kV
Drain current	4A
Pulsed drain current	10A
Power dissipation	60W
Case	TO263-7
Gate-source voltage	-4...18V
On-state resistance	0.6Ω
Mounting	SMD
Gate charge	14nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

B2M600170R

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 60W

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand