B2M600170R
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 60W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M600170R
TME Symbol:
B2M600170R
Specification
Manufacturer | BASiC SEMICONDUCTOR | ||
Type of transistor | N-MOSFET | ||
Technology | SiC | ||
Polarisation | unipolar | ||
Drain-source voltage | 1.7kV | ||
Drain current | 4A | ||
Pulsed drain current | 10A | ||
Power dissipation | 60W | ||
Case | TO263-7 | ||
Gate-source voltage | -4...18V | ||
On-state resistance | 0.6Ω | ||
Mounting | SMD | ||
Gate charge | 14nC | ||
Kind of package | reel, tape | ||
Kind of channel | enhancement | ||
Features of semiconductor devices | Kelvin terminal |
Gross weight1 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: SMD N channel transistors BASiC SEMICONDUCTOR,
* B2M600170RNo. of pieces (Multiplicity: 800)
0 in TME stock
Net price for quantities from 800 pcs - 2.29 USDGross price for quantities from 800 pcs - 2.29 USD