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GD20PJX65L2S

Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A

Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD20PJX65L2S
TME Symbol:
GD20PJX65L2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
650V
Collector current
20A
Case
L2.2
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
40A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight24 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD20PJX65L2S
0 in TME stock
No. of pieces (Multiple of: 1)
Minimum order quantity: 1.
Multiple of: 1.
Net price for quantities from 1 pcs - 38.50 USDGross price for quantities from 1 pcs - 38.50 USD
Net price for quantities from 3 pcs - 33.93 USDGross price for quantities from 3 pcs - 33.93 USD
Net price for quantities from 12 pcs - 30.47 USDGross price for quantities from 12 pcs - 30.47 USD
Net price for quantities from 24 pcs - 28.46 USDGross price for quantities from 24 pcs - 28.46 USD