+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

We would like to inform that on 06.09.2026 at 08:00 AM - 11:00 AM (CEST) some problems with access to the website and online orders may occur. We apologize for any inconvenience.

IXBH42N170A

Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXBH42N170A
TME Symbol:
IXBH42N170A

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
1.7kV
Collector current
21A
Power dissipation
357W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
265A
Mounting
THT
Gate charge
188nC
Kind of package
tube
Turn-on time
33ns
Turn-off time
308ns
Features of semiconductor devices
high voltage
Gross weight6.175 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
*
IXBH42N170A
300 in TME stock
Net price for quantities from 1 pcs - 32.23 USDGross price for quantities from 1 pcs - 32.23 USD
Net price for quantities from 3 pcs - 31.06 USDGross price for quantities from 3 pcs - 31.06 USD
Net price for quantities from 10 pcs - 29.90 USDGross price for quantities from 10 pcs - 29.90 USD
Net price for quantities from 30 pcs - 28.74 USDGross price for quantities from 30 pcs - 28.74 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Hardly available product
Packaging method by the manufacturerTube = 30 pcs