MCNA120UI2200PED
Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 2.2kV
Manufacturer: IXYS
Manufacturer part number:
MCNA120UI2200PED
TME Symbol:
MCNA120UI2200PED
Specification
Manufacturer | IXYS | |
Type of semiconductor module | IGBT | |
Semiconductor structure | diode/thyristor/IGBT | |
Topology | 3-phase diode-thyristor bridge, boost chopper | |
Max. off-state voltage | 2.2kV | |
Collector current | 80A | |
Case | E2-Pack | |
Application | Inverter | |
Electrical mounting | Press-in PCB | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 150A | |
Mechanical mounting | screw |
Gross weight100 g
Certificates
See other products in this category: IGBT modules IXYS,
* MCNA120UI2200PEDNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 199.91 USDGross price for quantities from 1 pcs - 199.91 USD
Net price for quantities from 3 pcs - 177.95 USDGross price for quantities from 3 pcs - 177.95 USD
Net price for quantities from 5 pcs - 157.15 USDGross price for quantities from 5 pcs - 157.15 USD