MII200-12A4
Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 180A
Manufacturer: IXYS
Manufacturer part number:
MII200-12A4
TME Symbol:
MII200-12A4
Specification
Manufacturer | IXYS | ||
Type of semiconductor module | IGBT | ||
Semiconductor structure | transistor/transistor | ||
Topology | IGBT half-bridge | ||
Max. off-state voltage | 1.2kV | ||
Collector current | 180A | ||
Case | Y3-DCB | ||
Application | motors | ||
Electrical mounting | FASTON connectors, screw | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 360A | ||
Power dissipation | 1.13kW | ||
Technology | NPT | ||
Mechanical mounting | screw |
Gross weight10 g
Certificates
See other products in this category: IGBT modules IXYS,
* MII200-12A4No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 240.69 USDGross price for quantities from 1 pcs - 240.69 USD
Net price for quantities from 4 pcs - 215.71 USDGross price for quantities from 4 pcs - 215.71 USD
Net price for quantities from 6 pcs - 194.14 USDGross price for quantities from 6 pcs - 194.14 USD