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AFGY100T65SPD

Transistor: IGBT; 650V; 100A; 330W; TO247-3

Product family

Manufacturer: ONSEMI

Manufacturer part number:
AFGY100T65SPD
TME Symbol:
AFGY100T65SPD

Specification

Manufacturer
ONSEMI
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
100A
Power dissipation
330W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
300A
Mounting
THT
Gate charge
109nC
Kind of package
tube
Gross weight3 g
Certificates
See other products in this category: THT IGBT transistors ONSEMI,
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AFGY100T65SPD
0 in TME stock
Net price for quantities from 1 pcs - 11.96 USDGross price for quantities from 1 pcs - 11.96 USD
Net price for quantities from 5 pcs - 9.68 USDGross price for quantities from 5 pcs - 9.68 USD
Net price for quantities from 10 pcs - 8.73 USDGross price for quantities from 10 pcs - 8.73 USD
Net price for quantities from 30 pcs - 8.32 USDGross price for quantities from 30 pcs - 8.32 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.