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Manufacturer	ALPHA & OMEGA SEMICONDUCTOR
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	12V
Power dissipation	3.1W
Case	DFN10
Gate-source voltage	±8V
On-state resistance	2mΩ
Mounting	SMD
Gate charge	60nC
Kind of channel	enhancement
Semiconductor structure	common drain
Version	ESD

AOC3878

Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain

Specification

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