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Manufacturer	ALPHA & OMEGA SEMICONDUCTOR
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	30V
Drain current	18A
Pulsed drain current	40A
Power dissipation	9.2W
Case	DFN3x3A
Gate-source voltage	±16V
On-state resistance	11.5mΩ
Mounting	SMD
Gate charge	11nC
Kind of channel	enhancement
Semiconductor structure	asymmetric

AONH36328

Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A

Specification