APT33GF120B2RDQ2G
Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max
Manufacturer: MICROCHIP TECHNOLOGY
Manufacturer part number:
APT33GF120B2RDQ2G
TME Symbol:
APT33GF120B2RDQ2G
Specification
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | NPT | |
Collector-emitter voltage | 1.2kV | |
Collector current | 30A | |
Power dissipation | 357W | |
Case | T-Max | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 75A | |
Mounting | THT | |
Gate charge | 170nC | |
Kind of package | tube | |
Turn-on time | 31ns | |
Turn-off time | 355ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Gross weight6 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT IGBT transistors MICROCHIP TECHNOLOGY,
* APT33GF120B2RDQ2GNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 26.41 USDGross price for quantities from 1 pcs - 26.41 USD
Net price for quantities from 3 pcs - 23.77 USDGross price for quantities from 3 pcs - 23.77 USD
Net price for quantities from 10 pcs - 20.88 USDGross price for quantities from 10 pcs - 20.88 USD
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