APT35GP120B2D2G
Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Manufacturer: MICROCHIP TECHNOLOGY
Manufacturer part number:
APT35GP120B2D2G
TME Symbol:
APT35GP120B2D2G
Specification
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of transistor | IGBT | ||
Technology | POWER MOS 7®, PT | ||
Collector-emitter voltage | 1.2kV | ||
Collector current | 46A | ||
Power dissipation | 543W | ||
Case | T-Max | ||
Gate-emitter voltage | ±30V | ||
Pulsed collector current | 140A | ||
Mounting | THT | ||
Gate charge | 150nC | ||
Kind of package | tube | ||
Turn-on time | 36ns | ||
Turn-off time | 0.22µs | ||
Features of semiconductor devices | integrated anti-parallel diode |
Gross weight6 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT IGBT transistors MICROCHIP TECHNOLOGY,
* APT35GP120B2D2GNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 27.93 USDGross price for quantities from 1 pcs - 27.93 USD
Net price for quantities from 3 pcs - 25.15 USDGross price for quantities from 3 pcs - 25.15 USD
Net price for quantities from 10 pcs - 22.23 USDGross price for quantities from 10 pcs - 22.23 USD
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