APT40GP90B2DQ2G
Transistor: IGBT; PT; 900V; 50A; 543W; T-Max
Manufacturer: MICROCHIP TECHNOLOGY
Manufacturer part number:
APT40GP90B2DQ2G
TME Symbol:
APT40GP90B2DQ2G
Specification
Manufacturer | MICROCHIP TECHNOLOGY | ||
Type of transistor | IGBT | ||
Technology | POWER MOS 7®, PT | ||
Collector-emitter voltage | 900V | ||
Collector current | 50A | ||
Power dissipation | 543W | ||
Case | T-Max | ||
Gate-emitter voltage | ±30V | ||
Pulsed collector current | 160A | ||
Mounting | THT | ||
Gate charge | 145nC | ||
Kind of package | tube | ||
Turn-on time | 37ns | ||
Turn-off time | 0.22µs | ||
Features of semiconductor devices | integrated anti-parallel diode |
Gross weight6.84 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT IGBT transistors MICROCHIP TECHNOLOGY,
* APT40GP90B2DQ2GNo. of pieces (Multiplicity: 1)
29 in TME stock
Net price for quantities from 1 pcs - 27.06 USDGross price for quantities from 1 pcs - 27.06 USD
Net price for quantities from 3 pcs - 24.36 USDGross price for quantities from 3 pcs - 24.36 USD
Net price for quantities from 10 pcs - 21.53 USDGross price for quantities from 10 pcs - 21.53 USD
Offer available for logged-in customers
Packaging method by the manufacturerTube = 30 pcs