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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET x2
Technology	OptiMOS™ 5
Polarisation	unipolar
Drain-source voltage	25V
Drain current	31A
Power dissipation	6.25W
Case	PG-TISON-8-4
Gate-source voltage	±16V
On-state resistance	4mΩ
Mounting	SMD
Kind of channel	enhancement

BSG0811NDATMA1

Transistor: N-MOSFET x2; unipolar; 25V; 31A; 6.25W; PG-TISON-8-4

Specification

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