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Manufacturer	NEXPERIA
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	30V
Drain current	40A
Pulsed drain current	329A
Power dissipation	68W
Case	LFPAK33, SOT1210
Gate-source voltage	±10V
On-state resistance	10mΩ
Mounting	SMD
Gate charge	26.7nC
Kind of package	reel, tape
Kind of channel	enhancement
Application	automotive industry

BUK9K5R1-30EX

Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W

Specification

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