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DG30X07T2

Transistor: IGBT; 650V; 30A; 208W; TO247

Documentation EN
Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
DG30X07T2
TME Symbol:
DG30X07T2

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
30A
Power dissipation
208W
Case
TO247
Gate-emitter voltage
±20V
Pulsed collector current
90A
Mounting
THT
Gate charge
0.22µC
Kind of package
tube
Turn-on time
0.1µs
Turn-off time
306ns
Features of semiconductor devices
integrated anti-parallel diode
Gross weight6.12 g
Certificates
See other products in this category: THT IGBT transistors STARPOWER SEMICONDUCTOR,
*
DG30X07T2
76 in TME stock
No. of pieces (Multiple of: 1)
Minimum order quantity: 1.
Multiple of: 1.
Net price for quantities from 1 pcs - 2.72 USDGross price for quantities from 1 pcs - 2.72 USD
Net price for quantities from 3 pcs - 2.45 USDGross price for quantities from 3 pcs - 2.45 USD
Net price for quantities from 10 pcs - 2.16 USDGross price for quantities from 10 pcs - 2.16 USD
Net price for quantities from 30 pcs - 1.95 USDGross price for quantities from 30 pcs - 1.95 USD
Packaging method by the manufacturer:
Tube = 30 pcs