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Manufacturer	DIODES INCORPORATED
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	12V
Drain current	10.8A
Pulsed drain current	80A
Power dissipation	1.73W
Case	X4-DSN3015-10
Gate-source voltage	±8V
On-state resistance	6.1mΩ
Mounting	SMD
Gate charge	35.7nC
Kind of package	7 inch reel, tape
Kind of channel	enhancement

DMN12M7UCA10-7

Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W

Specification

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