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Manufacturer	DIODES INCORPORATED
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	20V
Drain current	3.6A
Pulsed drain current	25A
Power dissipation	0.9W
Case	U-DFN2020-6
Gate-source voltage	±12V
On-state resistance	55mΩ
Mounting	SMD
Gate charge	12nC
Kind of package	13 inch reel, tape
Kind of channel	enhancement

DMN2050LFDB-13

Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW

Specification

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