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Manufacturer	DIODES INCORPORATED
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	30V
Drain current	0.2A
Pulsed drain current	0.8A
Power dissipation	0.2W
Case	SOT563
Gate-source voltage	±20V
On-state resistance	7Ω
Mounting	SMD
Gate charge	1.23nC
Kind of package	13 inch reel, tape
Kind of channel	enhancement

DMN33D9LV-13

Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW

Specification

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