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Manufacturer	DIODES INCORPORATED
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	30V
Drain current	0.6A
Pulsed drain current	4A
Power dissipation	0.35W
Case	SOT363
Gate-source voltage	±20V
On-state resistance	0.7Ω
Mounting	SMD
Gate charge	1.2nC
Kind of package	13 inch reel, tape
Kind of channel	enhancement

DMN3401LDW-13

Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 4A; 350mW

Specification

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