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DMTH10H017LPDQ-13

Transistor: N-MOSFET x2; unipolar; 100V; 9A; Idm: 236A; 1.5W


Manufacturer: DIODES INCORPORATED

Manufacturer part number:
DMTH10H017LPDQ-13
TME Symbol:
DMTH10H017LPDQ-13

Specification

Manufacturer
DIODES INCORPORATED
Type of transistor
N-MOSFET x2
Polarisation
unipolar
Drain-source voltage
100V
Drain current
9A
Pulsed drain current
236A
Power dissipation
1.5W
Case
PowerDI®5060-8
Gate-source voltage
±20V
On-state resistance
30.3mΩ
Mounting
SMD
Gate charge
28.6nC
Kind of package
13 inch reel, tape
Kind of channel
enhancement
Application
automotive industry
Gross weight0.1 g
Certificates

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DMTH10H017LPDQ-13
0 in TME stock
Net price for quantities from 2500 pcs - 0.80 USDGross price for quantities from 2500 pcs - 0.80 USD
No. of pieces (Multiplicity: 2 500)
Minimum order quantity: 2 500.
Multiplicity: 2 500.