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F475R12KS4BOSA1

Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A

Manufacturer: INFINEON TECHNOLOGIES

Manufacturer part number:
F475R12KS4BOSA1
TME Symbol:
F475R12KS4BOSA1

Specification

Manufacturer
INFINEON TECHNOLOGIES
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge x2, NTC thermistor
Max. off-state voltage
1.2kV
Collector current
75A
Case
AG-ECONO2-6
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
150A
Power dissipation
500W
Technology
EconoPACK™ 2
Mechanical mounting
screw
Gross weight180 g
Certificates
See other products in this category: IGBT modules INFINEON TECHNOLOGIES
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F475R12KS4BOSA1
Product withdrawn from the offer
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