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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	650V
Drain current	24A
Pulsed drain current	60A
Power dissipation	181W
Case	D2PAK
Gate-source voltage	±30V
On-state resistance	0.125Ω
Mounting	SMD
Gate charge	46nC
Kind of package	reel, tape
Kind of channel	enhancement

FCB125N65S3

Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK

Specification