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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	7.4A
Pulsed drain current	22.2A
Power dissipation	89W
Case	DPAK
Gate-source voltage	±20V
On-state resistance	0.6Ω
Mounting	SMD
Gate charge	20nC
Kind of package	reel, tape
Kind of channel	enhancement

FCD600N60Z

Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK

Specification