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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	7A
Pulsed drain current	21A
Power dissipation	83W
Case	DPAK
Gate-source voltage	±30V
On-state resistance	0.6Ω
Mounting	SMD
Gate charge	23nC
Kind of package	reel, tape
Kind of channel	enhancement

FCD7N60TM-WS

Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK

Specification