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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	800V
Drain current	6A
Pulsed drain current	18A
Power dissipation	75W
Case	DPAK
Gate-source voltage	±20V
On-state resistance	0.85Ω
Mounting	SMD
Gate charge	22nC
Kind of package	reel, tape
Kind of channel	enhancement

FCD850N80Z

Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 75W; DPAK

Specification