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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	76A
Pulsed drain current	228A
Power dissipation	595W
Case	TO247
Gate-source voltage	±20V
On-state resistance	36mΩ
Mounting	THT
Gate charge	277nC
Kind of package	tube
Kind of channel	enhancement

FCH041N65EFL4

Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247

Specification