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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	650V
Drain current	38A
Pulsed drain current	95A
Power dissipation	260W
Case	TDFN4
Gate-source voltage	±30V
On-state resistance	80mΩ
Mounting	SMD
Gate charge	71nC
Kind of package	reel, tape
Kind of channel	enhancement

FCMT080N65S3

Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4

Specification