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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	200A
Pulsed drain current	1100A
Power dissipation	250W
Case	D2PAK-7
Gate-source voltage	±20V
On-state resistance	2.6mΩ
Mounting	SMD
Gate charge	84nC
Kind of package	reel, tape
Kind of channel	enhancement

FDB0260N1007L

Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W

Specification