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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Technology	PowerTrench®
Polarisation	unipolar
Drain-source voltage	100V
Drain current	80A
Power dissipation	310W
Case	D2PAK
Gate-source voltage	±20V
On-state resistance	22mΩ
Mounting	SMD
Gate charge	110nC
Kind of package	reel, tape
Kind of channel	enhancement

FDB3632

Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK

Specification