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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	176A
Pulsed drain current	704A
Power dissipation	227W
Case	D2PAK
Gate-source voltage	±20V
On-state resistance	3.5mΩ
Mounting	SMD
Gate charge	89nC
Kind of package	reel, tape
Kind of channel	enhancement

FDB86135

Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK

Specification