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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Technology	PowerTrench®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	6.5A
Pulsed drain current	25A
Power dissipation	1.6W
Case	SuperSOT-6
Gate-source voltage	±20V
On-state resistance	36mΩ
Mounting	SMD
Gate charge	7.4nC
Kind of package	reel, tape
Kind of channel	enhancement

FDC8886

Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W

Specification

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