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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	200V
Drain current	16A
Pulsed drain current	64A
Power dissipation	89W
Case	DPAK3
Gate-source voltage	±20V
On-state resistance	0.125Ω
Mounting	SMD
Gate charge	30nC
Kind of package	reel, tape
Kind of channel	enhancement

FDD18N20LZ

Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3

Specification