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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	34A
Pulsed drain current	100A
Power dissipation	83W
Case	DPAK
Gate-source voltage	±20V
On-state resistance	32mΩ
Mounting	SMD
Gate charge	57nC
Kind of package	reel, tape
Kind of channel	enhancement

FDD3670

Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 100A; 83W; DPAK

Specification