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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	150V
Drain current	2.4A
Pulsed drain current	12A
Power dissipation	2.4W
Case	MicroFET
Gate-source voltage	±20V
On-state resistance	0.175Ω
Mounting	SMD
Gate charge	4.1nC
Kind of package	reel, tape
Kind of channel	enhancement

FDMA86251

Transistor: N-MOSFET; unipolar; 150V; 2.4A; Idm: 12A; 2.4W; MicroFET

Specification