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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	40V
Drain current	192A
Pulsed drain current	300A
Power dissipation	125W
Case	DFN8
Gate-source voltage	±20V
On-state resistance	1.7mΩ
Mounting	SMD
Gate charge	170nC
Kind of package	reel, tape
Kind of channel	enhancement

FDMS8320LDC

Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8

Specification

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