FDN352AP

Name: ONSEMI FDN352AP
Brand: ONSEMI
SKU: FDN352AP
Availability: InStock

Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3

Manufacturer: ONSEMI

Manufacturer part number:

FDN352AP

TME Symbol:

FDN352AP

Net price for quantities from 1 pcs - 0.44 USDGross price for quantities from 1 pcs - 0.44 USD

Net price for quantities from 5 pcs - 0.36 USDGross price for quantities from 5 pcs - 0.36 USD

Net price for quantities from 10 pcs - 0.31 USDGross price for quantities from 10 pcs - 0.31 USD

Net price for quantities from 50 pcs - 0.19 USDGross price for quantities from 50 pcs - 0.19 USD

Net price for quantities from 100 pcs - 0.15 USDGross price for quantities from 100 pcs - 0.15 USD

Net price for quantities from 250 pcs - 0.12 USDGross price for quantities from 250 pcs - 0.12 USD

Net price for quantities from 500 pcs - 0.11 USDGross price for quantities from 500 pcs - 0.11 USD

Net price for quantities from 1000 pcs - 0.11 USDGross price for quantities from 1000 pcs - 0.11 USD

Net price for quantities from 3000 pcs - 0.10 USDGross price for quantities from 3000 pcs - 0.10 USD

No. of pieces (Multiplicity: 1)

Minimum order quantity: 1.
Multiplicity: 1.

Packaging method by the manufacturerReel = 3 000 pcs

Manufacturer	ONSEMI
Type of transistor	P-MOSFET
Technology	PowerTrench®
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-1.3A
Power dissipation	0.5W
Case	SuperSOT-3
Gate-source voltage	±25V
On-state resistance	0.4Ω
Mounting	SMD
Gate charge	1.9nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	logic level