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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	150V
Drain current	1.6A
Pulsed drain current	6A
Power dissipation	1.5W
Case	SOT23
Gate-source voltage	±20V
On-state resistance	261mΩ
Mounting	SMD
Gate charge	2.9nC
Kind of package	reel, tape
Kind of channel	enhancement

FDN86246

Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 6A; 1.5W; SOT23

Specification