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FDP18N50

Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB

Documentation EN
Product family

Manufacturer: ONSEMI

Manufacturer part number:
FDP18N50
TME Symbol:
FDP18N50

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
UniFET™
Polarisation
unipolar
Drain-source voltage
500V
Drain current
10.8A
Power dissipation
235W
Case
TO220AB
Gate-source voltage
±30V
On-state resistance
265mΩ
Mounting
THT
Gate charge
60nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2.045 g
Certificates
See other products in this category: THT N channel transistors ONSEMI,
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FDP18N50
915 in TME stock
Net price for quantities from 1 pcs - 3.65 USDGross price for quantities from 1 pcs - 3.65 USD
Net price for quantities from 3 pcs - 3.33 USDGross price for quantities from 3 pcs - 3.33 USD
Net price for quantities from 10 pcs - 2.75 USDGross price for quantities from 10 pcs - 2.75 USD
Net price for quantities from 50 pcs - 1.96 USDGross price for quantities from 50 pcs - 1.96 USD
Net price for quantities from 100 pcs - 1.86 USDGross price for quantities from 100 pcs - 1.86 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 50 pcs