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FDP3632

Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB

Documentation EN
Product family

Manufacturer: ONSEMI

Manufacturer part number:
FDP3632
TME Symbol:
FDP3632

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
PowerTrench®
Polarisation
unipolar
Drain-source voltage
100V
Drain current
12A
Power dissipation
310W
Case
TO220AB
Gate-source voltage
±20V
On-state resistance
22mΩ
Mounting
THT
Gate charge
110nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2.013 g
Certificates
See other products in this category: THT N channel transistors ONSEMI,
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FDP3632
0 in TME stock
Net price for quantities from 1 pcs - 4.30 USDGross price for quantities from 1 pcs - 4.30 USD
Net price for quantities from 10 pcs - 2.57 USDGross price for quantities from 10 pcs - 2.57 USD
Net price for quantities from 50 pcs - 2.40 USDGross price for quantities from 50 pcs - 2.40 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 50 pcs