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FDP61N20

Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB

Documentation EN
Product family

Manufacturer: ONSEMI

Manufacturer part number:
FDP61N20
TME Symbol:
FDP61N20

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
UniFET™
Polarisation
unipolar
Drain-source voltage
200V
Drain current
38.5A
Power dissipation
417W
Case
TO220AB
Gate-source voltage
±30V
On-state resistance
41mΩ
Mounting
THT
Gate charge
75nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2.01 g
Certificates
See other products in this category: THT N channel transistors ONSEMI,
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FDP61N20
89 in TME stock
Net price for quantities from 1 pcs - 2.78 USDGross price for quantities from 1 pcs - 2.78 USD
Net price for quantities from 10 pcs - 2.35 USDGross price for quantities from 10 pcs - 2.35 USD
Net price for quantities from 20 pcs - 1.97 USDGross price for quantities from 20 pcs - 1.97 USD
Net price for quantities from 50 pcs - 1.75 USDGross price for quantities from 50 pcs - 1.75 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 50 pcs