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FDP80N06

Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3

Product family

Manufacturer: ONSEMI

Manufacturer part number:
FDP80N06
TME Symbol:
FDP80N06

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
DMOS, UniFET™
Polarisation
unipolar
Drain-source voltage
60V
Drain current
65A
Pulsed drain current
320A
Power dissipation
176W
Case
TO220-3
Gate-source voltage
±20V
On-state resistance
10mΩ
Mounting
THT
Gate charge
74nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
See other products in this category: THT N channel transistors ONSEMI,
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FDP80N06
0 in TME stock
Net price for quantities from 1 pcs - 1.74 USDGross price for quantities from 1 pcs - 1.74 USD
Net price for quantities from 3 pcs - 1.56 USDGross price for quantities from 3 pcs - 1.56 USD
Net price for quantities from 10 pcs - 1.37 USDGross price for quantities from 10 pcs - 1.37 USD
Net price for quantities from 50 pcs - 1.24 USDGross price for quantities from 50 pcs - 1.24 USD
Net price for quantities from 250 pcs - 1.12 USDGross price for quantities from 250 pcs - 1.12 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.