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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	80V
Drain current	7.6A
Pulsed drain current	50A
Power dissipation	2.5W
Case	SO8
Gate-source voltage	±20V
On-state resistance	29mΩ
Mounting	SMD
Gate charge	34nC
Kind of package	reel, tape
Kind of channel	enhancement

FDS3580

Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8

Specification