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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	3.4A
Pulsed drain current	15A
Power dissipation	5W
Case	SO8
Gate-source voltage	±20V
On-state resistance	0.105Ω
Mounting	SMD
Gate charge	3nC
Kind of package	reel, tape
Kind of channel	enhancement

FDS86106

Transistor: N-MOSFET; unipolar; 100V; 3.4A; Idm: 15A; 5W; SO8

Specification