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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	11.2A
Pulsed drain current	50A
Power dissipation	5W
Case	SO8
Gate-source voltage	±20V
On-state resistance	9.8mΩ
Mounting	SMD
Gate charge	29nC
Kind of package	reel, tape
Kind of channel	enhancement

FDS86140

Transistor: N-MOSFET; unipolar; 100V; 11.2A; Idm: 50A; 5W; SO8

Specification