+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

Quick Buy Favourites

No U.S. Customs – Order from TME with Confidence

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	ONSEMI
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	60A
Power dissipation	153W
Case	TO3PN
Gate-emitter voltage	±20V
Pulsed collector current	180A
Mounting	THT
Gate charge	84nC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

FGA6560WDF

Transistor: IGBT; 650V; 60A; 153W; TO3PN

Specification