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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	150V
Drain current	63.5A
Pulsed drain current	360A
Power dissipation	375W
Case	TO3PN
Gate-source voltage	±25V
On-state resistance	18mΩ
Mounting	THT
Gate charge	285nC
Kind of package	tube
Kind of channel	enhancement

FQA90N15

Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN

Specification