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FQB4N80TM

Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK


Manufacturer: ONSEMI

Manufacturer part number:
FQB4N80TM
TME Symbol:
FQB4N80TM

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
QFET®
Polarisation
unipolar
Drain-source voltage
800V
Drain current
2.47A
Power dissipation
130W
Case
D2PAK
Gate-source voltage
±30V
On-state resistance
3.6Ω
Mounting
SMD
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.025 g
Certificates

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FQB4N80TM
0 in TME stock
Net price for quantities from 800 pcs - 1.20 USDGross price for quantities from 800 pcs - 1.20 USD
No. of pieces (Multiplicity: 800)
Minimum order quantity: 800.
Multiplicity: 800.